OVERVIEW
The global adoption of 3.3 kV Silicon Carbide (SiC) power devices is gaining momentum as industries demand higher efficiency, greater power density, and highly reliable HV power conversion. Driven by emerging applications such as heavy transportation & rail traction, AI data centres, EV infrastructure, and grid-scale energy systems, 3.3 kV SiC technology is reshaping the future of power electronics.
To support the transition from device development to volume manufacturing, test solutions must address the unique challenges of high-voltage SiC devices, including measurement accuracy, reliability assurance, test cost, and production efficiency.
| Challenge factor | High voltage Si | Next-Gen 3.3 kV SiC |
|---|---|---|
| Breakdown voltage | Lower (<3 kV) | Higher (4-4.5 kV) |
| Switching speed (dv/dt) | Low (<10 V/ns) | Extreme (>50-100 V/ns) |
| Short circuit tolerance | Robust (<1 us) | Critical (<400 ns) |
| Parasitic inductance | Forgiving | Critical (<30 nH) |
COSMIC M2
Cosmic’s M2 Solution delivers a comprehensive and proven platform for both R&D characterization and high-volume production testing of 3.3 kV SiC devices, helping manufacturers maximize throughput, test with confidence, and expand productivity.
Comprehensive | Everything you need for AC and DC 3.3 kV SiC devices
3.3 kV SiC devices exhibit breakdown at 4-4.5 kV. The M2 HV 4.5 kV and 10 kV expansion support high-voltage testing with precise measurement of very low currents.
200А (expandable to 1000 A)
For 3.3 kV SiC devices with deeper depletion regions, M2 Cygni combines Rg testing and capacitance measurement under high-voltage bias to assess the gate structure while the device’s voltage supporting structure is active.
Ciss/Cross/Coss measurement
M2 DS6 Magnetar supports dynamic testing of 3.3 kV SiC at 80% of rated voltage.
Sub-microsecond protection and low-inductance measurement for fast switching and robust short-circuit tolerance. 5 kV UIS adds high-voltage avalanche stress testing capability.
PROVEN TEST 3.3 KV SIC AT EVERY STAGE
M2 WAFER EDITION
High-voltage testing with 4.5 kV / 10 kV DC generators.
Detect defects early with DC, UIS and Rg testing at a single site.
Comprehensive safety for probes and generators during UIS device breakdown.
WAFER
M2 TURRET EDITION
Maximum throughput with UPH up to 15,000 devices/hour.
Versatile testing for 3.3 kV SiC power device.
High productivity interfaces to all rotary and conveyor handlers.
DIE | DISCRETE | SMALL MODULES
M2 FLEXIBLE EDITION
Flexible handling for frequent product changes with pick-and-place handlers.
Scalable platform that grows with your production needs.
Reproducible results from lab and wafer testing to KGD, package and small-module final testing.
DIE | DISCRETE | MODULE
M2 MAGNETAR600
Turnkey laboratory solution for 3.3 kV SiC with DC/AC measurements and low-inductance sockets for your device packages.
High accuracy with reproducible results across systems.
Comprehensive safety for operators and measurement hardware.
DIE | DISCRETE | MODULE